TSM2537CQ RFG

Part NumberTSM2537CQ RFG

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	TSM2537CQ
Standard Package	1
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	11.6A (Tc), 9A (Tc)
Rds On (Max) @ Id, Vgs	30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.1nC @ 4.5V, 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	677pF @ 10V, 744pF @ 10V
Power - Max	6.25W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Supplier Device Package	6-TDFN (2x2)

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IRF7343TRPBF	Infineon Technologies, Mosfet Array N and P-Channel 55V 4.7A, 3.4A 2W Surface Mount 8-SO, HEXFET®	View
SQ4532AEY-T1_GE3	Vishay Siliconix, Mosfet Array N and P-Channel 30V 7.3A (Tc), 5.3A (Tc) 3.3W Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®	View
DMC3025LSDQ-13	Diodes Incorporated, Mosfet Array N and P-Channel 30V 6.5A (Ta), 4.2A (Ta) 1.2W (Ta) Surface Mount 8-SO, Automotive, AEC-Q101	View
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TSM2537CQ RFG	Taiwan Semiconductor Corporation, Mosfet Array N and P-Channel 20V 11.6A (Tc), 9A (Tc) 6.25W Surface Mount 6-TDFN (2x2),	View

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